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3.3V 64K x 16 Bit Asynchronous Static RAM

封装信息

Lead Count (#) 44
Pkg. Code PHG44
Pitch (mm) 0.8
Pkg. Type TSOP
Pkg. Dimensions (mm) 18.41 x 10.16 x 1.0

环境和出口类别

Pb (Lead) Free Yes
Moisture Sensitivity Level (MSL) 3
ECCN (US) EAR99
HTS (US) 8542.32.0041

产品属性

Lead Count (#) 44
Pb (Lead) Free Yes
Carrier Type Tray
Moisture Sensitivity Level (MSL) 3
Country of Assembly Taiwan
Country of Wafer Fabrication Taiwan, United States
Price (USD) 2.01333
Access Time (ns) 15
Architecture Asynchronous
Bus Width (bits) 16
Core Voltage (V) 3.3
Density (Kb) 1024
I/O Voltage (V) 3.3 - 3.3
Length (mm) 18.41
MOQ 135
Organization 64K x 16
Package Area (mm²) 187.0
Pb Free Category e3 Sn
Pitch (mm) 0.8
Pkg. Dimensions (mm) 18.41 x 10.16 x 1.0
Pkg. Type TSOP
Qty. per Carrier (#) 135
Qty. per Reel (#) 0
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel No
Temp. Range 0 to 70°C
Thickness (mm) 1.0
Width (mm) 10.16

描述

The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.