跳转到主要内容
3.3V 128K x 36 Synchronous Pipelined Burst SRAM with 2.5V I/O

封装信息

CAD 模型:View CAD Model
Pkg. Type:PBGA
Pkg. Code:BG119
Lead Count (#):119
Pkg. Dimensions (mm):14.0 x 22.0 x 2.15
Pitch (mm):1.27

环境和出口类别

Pb (Lead) FreeNo
Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041

产品属性

Lead Count (#)119
Pb (Lead) FreeNo
Carrier TypeReel
Moisture Sensitivity Level (MSL)3
ArchitectureSynch Burst
Bus Width (bits)36
Core Voltage (V)3.3
Density (Kb)4608
I/O Frequency (MHz)183 - 183
I/O Voltage (V)2.5 - 2.5
Length (mm)14
MOQ1000
Organization128K x 36
Output TypePipelined
Package Area (mm²)308
Pb Free Categorye0
Pitch (mm)1.27
Pkg. Dimensions (mm)14.0 x 22.0 x 2.15
Pkg. TypePBGA
Qty. per Carrier (#)0
Qty. per Reel (#)1000
Reel Size (in)13
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelYes
Temp. Range (°C)0 to 70°C
Thickness (mm)2.15
Width (mm)22
已发布No

描述

The 71V25761 3.3V CMOS synchronous SRAM is organized as 128K x 36 and contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V25761 can provide four cycles of data for a single address presented to the SRAM.