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瑞萨电子 (Renesas Electronics Corporation)
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O

封装信息

CAD 模型:View CAD Model
Pkg. Type:CABGA
Pkg. Code:BQ165
Lead Count (#):165
Pkg. Dimensions (mm):15.0 x 13.0 x 1.2
Pitch (mm):1

环境和出口类别

Pb (Lead) FreeNo
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041
Moisture Sensitivity Level (MSL)3

产品属性

Lead Count (#)165
Pb (Lead) FreeNo
Carrier TypeReel
ArchitectureZBT
Bus Width (bits)18
Core Voltage (V)3.3
Cycle Time (ns)75
Density (Kb)4608
I/O Voltage (V)2.5 - 2.5
Length (mm)15
MOQ2000
Moisture Sensitivity Level (MSL)3
Organization256K x 18
Output TypeFlowthrough
Package Area (mm²)195
Pb Free Categorye0
Pitch (mm)1
Pkg. Dimensions (mm)15.0 x 13.0 x 1.2
Pkg. TypeCABGA
Qty. per Carrier (#)0
Qty. per Reel (#)2000
Reel Size (in)13
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelYes
Temp. Range (°C)-40 to 85°C
Thickness (mm)1.2
Width (mm)13

描述

The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).