封装信息
| Lead Count (#) | 119 |
| Pkg. Code | BGG119 |
| Pitch (mm) | 1.27 |
| Pkg. Type | PBGA |
| Pkg. Dimensions (mm) | 14.0 x 22.0 x 2.15 |
环境和出口类别
| Pb (Lead) Free | Yes |
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | NLR |
| HTS (US) | 8542320041 |
产品属性
| Lead Count (#) | 119 |
| Pb (Lead) Free | Yes |
| Carrier Type | Reel |
| Moisture Sensitivity Level (MSL) | 3 |
| Country of Assembly | Taiwan |
| Country of Wafer Fabrication | Taiwan, United States |
| Price (USD) | 1ku | 9.18596 |
| Architecture | Synch Burst |
| Bus Width (bits) | 36 |
| Core Voltage (V) | 3.3 |
| Density (Kb) | 4608 |
| I/O Frequency (MHz) | 1 - 1 |
| I/O Voltage (V) | 3.3 - 3.3 |
| Length (mm) | 14 |
| MOQ | 1000 |
| Organization | 128K x 36 |
| Output Type | Pipelined |
| Package Area (mm²) | 308.0 |
| Pb Free Category | e1 SnAgCu |
| Pitch (mm) | 1.27 |
| Pkg. Dimensions (mm) | 14.0 x 22.0 x 2.15 |
| Pkg. Type | PBGA |
| Qty. per Carrier (#) | 0 |
| Qty. per Reel (#) | 1000 |
| Reel Size (in) | 13 |
| Requires Terms and Conditions | Does not require acceptance of Terms and Conditions |
| Tape & Reel | Yes |
| Temp. Range | 0 to 70°C |
| Thickness (mm) | 2.15 |
| Width (mm) | 22 |
描述
The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.