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3.3V 128K x 36 Synchronous Flowthrough SRAM with 3.3V I/O

封装信息

CAD 模型:View CAD Model
Pkg. Type:CABGA
Pkg. Code:BQ165
Lead Count (#):165
Pkg. Dimensions (mm):15.0 x 13.0 x 1.2
Pitch (mm):1

环境和出口类别

Pb (Lead) FreeNo
Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041

产品属性

Lead Count (#)165
Pb (Lead) FreeNo
Carrier TypeReel
Moisture Sensitivity Level (MSL)3
ArchitectureSynch Burst
Bus Width (bits)36
Core Voltage (V)3.3
Density (Kb)4608
I/O Voltage (V)3.3 - 3.3
Length (mm)15
MOQ2000
Organization128K x 36
Output TypeFlowthrough
Package Area (mm²)195
Pb Free Categorye0
Pitch (mm)1
Pkg. Dimensions (mm)15.0 x 13.0 x 1.2
Pkg. TypeCABGA
Qty. per Carrier (#)0
Qty. per Reel (#)2000
Reel Size (in)13
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelYes
Temp. Range (°C)-40 to 85°C
Thickness (mm)1.2
Width (mm)13
已发布No

描述

The 71V3577 3.3V CMOS SRAM is organized as 128K x 36 and contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.