跳转到主要内容
瑞萨电子 (Renesas Electronics Corporation)
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flow-Through SRAM

封装信息

CAD 模型:View CAD Model
Pkg. Type:TQFP
Pkg. Code:PKG100
Lead Count (#):100
Pkg. Dimensions (mm):20.0 x 14.0 x 1.4
Pitch (mm):0.65

环境和出口类别

Pb (Lead) FreeYes
Moisture Sensitivity Level (MSL)3
ECCN (US)EAR99
HTS (US)8542.32.0041

产品属性

Lead Count (#)100
Pb (Lead) FreeYes
Carrier TypeReel
Moisture Sensitivity Level (MSL)3
Country of AssemblyTAIWAN
Country of Wafer FabricationTAIWAN, USA
ArchitectureZBT
Bus Width (bits)36
Core Voltage (V)3.3
Cycle Time (ns)80
Density (Kb)9216
I/O Voltage (V)2.5 - 2.5
Length (mm)20
MOQ1000
Organization256K x 36
Output TypeFlowthrough
Package Area (mm²)280
Pb Free Categorye3 Sn
Pitch (mm)0.65
Pkg. Dimensions (mm)20.0 x 14.0 x 1.4
Pkg. TypeTQFP
Price (USD)$27.92287
Qty. per Carrier (#)0
Qty. per Reel (#)1000
Reel Size (in)13
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelYes
Temp. Range (°C)-40 to 85°C
Thickness (mm)1.4
Width (mm)14

描述

The 71V65703 3.3V CMOS SRAM, organized as 256K x 36, is designed to eliminate dead bus cycles when turning the bus around between reads and writes or writes and reads. Thus it has been given the name ZBT™, or Zero Bus Turnaround. The 71V65703 contains address, data-in, and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.