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3.3V 256K x 36 Synchronous 3.3V I/O PipeLined SRAM

封装信息

Lead Count (#) 119
Pkg. Code BG119
Pitch (mm) 1.27
Pkg. Type PBGA
Pkg. Dimensions (mm) 14.0 x 22.0 x 2.15

环境和出口类别

Pb (Lead) Free No
Moisture Sensitivity Level (MSL) 3
ECCN (US) NLR
HTS (US) 8542320041

产品属性

Lead Count (#) 119
Pb (Lead) Free No
Carrier Type Reel
Moisture Sensitivity Level (MSL) 3
Price (USD) | 1ku 20.25651
Architecture Synch Burst
Bus Width (bits) 36
Core Voltage (V) 3.3
Density (Kb) 9216
I/O Frequency (MHz) 1 - 1
I/O Voltage (V) 3.3 - 3.3
Length (mm) 14.0
MOQ 1000
Organization 256K x 36
Output Type Pipelined
Package Area (mm²) 308.0
Pb Free Category e0
Pitch (mm) 1.27
Pkg. Dimensions (mm) 14.0 x 22.0 x 2.15
Pkg. Type PBGA
Qty. per Carrier (#) 0
Qty. per Reel (#) 1000
Reel Size (in) 13
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel Yes
Temp. Range 0 to 70°C
Thickness (mm) 2.15
Width (mm) 22.0

描述

The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin.