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3.3V 256K x 36 Synchronous 3.3V I/O PipeLined SRAM

封装信息

CAD 模型:View CAD Model
Pkg. Type:CABGA
Pkg. Code:BQ165
Lead Count (#):165
Pkg. Dimensions (mm):15.0 x 13.0 x 1.2
Pitch (mm):1

环境和出口类别

Pb (Lead) FreeNo
Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041

产品属性

Lead Count (#)165
Pb (Lead) FreeNo
Carrier TypeReel
Moisture Sensitivity Level (MSL)3
ArchitectureSynch Burst
Bus Width (bits)36
Core Voltage (V)3.3
Density (Kb)9216
I/O Frequency (MHz)150 - 150
I/O Voltage (V)3.3 - 3.3
Length (mm)15
MOQ2000
Organization256K x 36
Output TypePipelined
Package Area (mm²)195
Pb Free Categorye0
Pitch (mm)1
Pkg. Dimensions (mm)15.0 x 13.0 x 1.2
Pkg. TypeCABGA
Qty. per Carrier (#)0
Qty. per Reel (#)2000
Reel Size (in)13
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelYes
Temp. Range (°C)0 to 70°C
Thickness (mm)1.2
Width (mm)13
已发布No

描述

The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin.