特性
- Devices QML qualified in accordance with MIL-PRF-38535
- Detailed electrical and screening requirements are contained in SMD# 5962-96703 and Renesas' Intersil QM Plan
- 1.25 micron radiation hardened SOS CMOS
- Total dose >300K RAD (Si)
- Single Event Upset (SEU) immunity: <1 x 10-10 errors/bit/day (Typ)
- SEU LET threshold >100 MEV-cm2/mg
- Dose rate upset >1011 RAD (Si)/s, 20ns pulse
- Dose rate survivability >1012 RAD (Si)/s, 20ns pulse
- Latch-up free under any conditions
- Military temperature range -55 °C to +125 °C
- Significant power reduction compared to ALSTTL Logic
- DC operating voltage range 4.5V to 5.5V
- Input logic levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
- Input current ≤ 1µA at VOL, VOH
- Fast propagation delay 15ns (Max), 10ns (Typ)
ACS03MS Functional Diagram
描述
The Intersil ACS03MS is a radiation hardened quad 2-input NAND gate with open-drain outputs. The open-drain output can drive resistive loads from a separate supply voltage. The ACS03MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS logic family. The ACS03MS is supplied in a 14-lead Ceramic Flatpack (K suffix) or a Ceramic Dual In-Line package (D suffix).
