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瑞萨电子 (Renesas Electronics Corporation)
8 Mbit 超低功耗串行闪存

封装信息

CAD 模型:View CAD Model
Pkg. Type:SOICN
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm):2 x 3
Pitch (mm):0.5

环境和出口类别

Moisture Sensitivity Level (MSL)1
ECCN (US)EAR99
HTS (US)8542.32.0051
Pb (Lead) FreeYes

产品属性

Sample Catalog申请样品
Pkg. TypeSOICN
Carrier TypeTube
Moisture Sensitivity Level (MSL)1
Country of AssemblyCHINA
Country of Wafer FabricationCHINA
Deep Power Down (µA)0.1
Flash by TaskBoot Loader, Datalogging, Execute-in-Place, System Settings
InterfaceSingle, Dual, Quad SPI
Key Benefit90% energy savings
Key FeaturesUltra-low energy; Save more than 90% energy
Longevity2033 十二月
MOQ6370
Memory ClassUltra-Low Energy
Memory Density8
Operating Voltage Range (V)1.65 - 3.6
Pb (Lead) FreeYes
Pitch (mm)0.5
Pkg. Dimensions (mm)2 x 3
Qty. per Reel (#)5000
Read Current (mA)1.2
Sleep/Reset Mode Current (µA)0.1
Speed104 MHz
Temp. Range (°C)-40 to +85°C

描述

AT25EU0081A是我们系统增强类代码和数据存储解决方案中能耗最低的产品,专为所有系统内存任务而设计,包括启动/代码阴影和小字节负载更新。 该产品具有通用兼容性,功耗低且读取速度更快,可节省 70% 以上的能源。