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8 Mbit 超低功耗串行闪存

封装信息

Pkg. Type: SOICN
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm): 2 x 3
Pitch (mm): 0.5

环境和出口类别

Moisture Sensitivity Level (MSL) 1
ECCN (US) EAR99
HTS (US) 8542.32.0051
Pb (Lead) Free Yes

产品属性

Sample Catalog
Pkg. Type SOICN
Carrier Type Tube
Moisture Sensitivity Level (MSL) 1
Country of Assembly China
Deep Power Down (µA) 0.1
Flash by Task Boot Loader, Datalogging, Execute-in-Place, System Settings
Interface Single, Dual, Quad SPI
Key Benefit 90% energy savings
Key Features Ultra-low energy; Save more than 90% energy
Longevity 2033 12月
MOQ 6370
Memory Class Ultra-Low Energy
Memory Density 8 Mbit
Operating Voltage Range (V) 1.65 - 3.6
Pb (Lead) Free Yes
Pitch (mm) 0.5
Pkg. Dimensions (mm) 2 x 3
Qty. per Reel (#) 5000
Read Current (mA) 1.2
Sleep Mode Current (µA) 0.1
Speed 104 MHz
Temp. Range (°C) -40 to +85°C
已发布 Yes

描述

AT25EU0081A是我们系统增强类代码和数据存储解决方案中能耗最低的产品,专为所有系统内存任务而设计,包括启动/代码阴影和小字节负载更新。 该产品具有通用兼容性,功耗低且读取速度更快,可节省 70% 以上的能源。