封装信息
| Pkg. Type | SOIC-W |
| Pitch (mm) | 1.27 |
| Pkg. Dimensions (mm) | 5.18 x 7.70 |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 3 |
| Pb (Lead) Free | Yes |
| ECCN (US) | |
| HTS (US) |
产品属性
| Sample Catalog | |
| Pkg. Type | SOIC-W |
| Carrier Type | Tube |
| Moisture Sensitivity Level (MSL) | 3 |
| Country of Assembly | Taiwan |
| Deep Power Down (µA) | 1 |
| Flash by Task | Boot Loader, Execute-in-Place |
| Interface | Quad SPI (default), Single, Dual |
| Key Benefit | Standard features |
| Longevity | 2030 1月 |
| MOQ | 3600 |
| Memory Class | Standard Flash |
| Memory Density | 64 Mbit |
| Operating Voltage Range (V) | 2.7 - 3.6 |
| Pb (Lead) Free | Yes |
| Pitch (mm) | 1.27 |
| Pkg. Dimensions (mm) | 5.18 x 7.70 |
| Qty. per Reel (#) | 90 |
| Read Current (mA) | 3.3 |
| Speed | 133 MHz |
| Supply Voltage Vcc (V) | 2.7 - 3.6 |
| Supply Voltage Vcc Range | 2.7-3.6 |
| Temp. Range | -40 to +85°C |
| 已发布 | Yes |
有关 AT25QF641B 的资源
描述
The AT25QF641B is a member of our standard class code and data storage solutions designed for 3V systems in which program code is shadowed from Flash memory into embedded or external RAM for execution.
The architecture includes erase block sizes that are optimized to meet the needs of today's code and data storage applications and three security register pages for unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc