封装信息
| Pkg. Type | SOIC-N |
| Pitch (mm) | 1.27 |
| Pkg. Dimensions (mm) | 3.81 x 4.80 |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 1 |
| ECCN (US) | EAR99 |
| HTS (US) | 8542.32.00.51 |
| Pb (Lead) Free | Yes |
产品属性
| Sample Catalog | |
| Pkg. Type | SOIC-N |
| Moisture Sensitivity Level (MSL) | 1 |
| Price (USD) | 1ku | 2.1034 |
| Carrier Type | Tape & Reel |
| Deep Power Down (µA) | 0.4 |
| Flash by Task | Datalogging |
| Flexible Read/Write Buffer | Yes |
| Interface | Single SPI |
| Key Benefit | Includes controllable SRAM |
| Longevity | 2034 1月 |
| MOQ | 4000 |
| Memory Class | DataFlash |
| Memory Density | 16 Mbit |
| Operating Voltage Range (V) | 2.3 - 3.6 |
| Pb (Lead) Free | Yes |
| Pitch (mm) | 1.27 |
| Pkg. Dimensions (mm) | 3.81 x 4.80 |
| Qty. per Reel (#) | 4000 |
| Read Current (mA) | 6 |
| Read Modify Write | Yes |
| Speed | 85 MHz |
| Supply Voltage Vcc (V) | 2.3 - 3.6 |
| Supply Voltage Vcc Range | 2.3-3.6 |
| Temp. Range | -40 to +85°C |
| 已发布 | Yes |
描述
The AT45DB161E DataFlash is a member of our System Enhancing class of code and data storage solutions designed with an advanced dual SRAM buffer architecture that makes it the most efficient memory for data logging. It also incorporates a suite of advanced features that save system power, reduce processor overhead, simplify software development, and provide comprehensive data security and integrity options.