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车用功率MOSFETs

    通过使用最新的沟槽技术进行晶圆加工，并采用多线/夹片键合技术，瑞萨电子提供一系列具有低阻抗和高速开关特性的适用于汽车规格的产品。

   随着全球范围内燃油效率和废气排放的环保法规和能源政策的推进，电动车（HEV/EV）因其“环保节能”和“安全便捷”的优势持续普及。随着这些新一代车辆的推广，对高性能、高效率和高功能的电力器件的需求也在增加。为满足这些需求，瑞萨电子一直通过设计、开发和工艺管理，向市场提供了高质量和高可靠性的产品。近期，瑞萨电子正在加速开发新的工艺和产品，力求提升性能、增强可靠性，并进一步完善功能。

汽车低压功率MOSFET工艺趋势

   对于用于高温环境下大电流驱动的汽车电子设备，低导通电阻是功率MOSFET最重要的特性。近年来，随着PWM和电源应用的发展，开关特性也变得愈加重要。基于这些技术趋势，瑞萨电子正在开发具备超低导通电阻和低栅极电容的高性能工艺。此外，瑞萨电子还结合多年积累的经验进行坚固设计，确保产品具有卓越的耐用性和高度的可靠性，从而满足客户对高质量与稳定性的严格要求。

PolarityVDSS(V)ID≦50(A)50<ID≦100(A)100(A)<ID 
Nch>100V   
81V to 100V  View Products
61V to 80V   
41V to 60VView ProductsView ProductsView Products
20V to 40VView ProductsView ProductsView Products
PolarityVDSS(V)ID≧-50(A)-50>ID≧-100(A)
Pch-20V to -40VView ProductsView Products
-41V to -60VView ProductsView Products

产品选择器: 车用功率MOSFETs

通过我们的参数化产品选择工具探索我们的产品目录。比较各种参数的规格，找到适合您设计的零件。

产品选择器
类型 文档标题 日期
应用说明
Power MOSFETs TOLL and TOLT Comparison of Thermal Performance
PDF 596 KB
Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
应用说明
Precautions for parallel connection of power MOSFETs
PDF 309 KB 日本語
AI 生成的摘要: Parallel connection of power MOSFETs requires careful management of current balance to prevent device damage. During conduction, differences in RDS(on) and wiring resistance cause current imbalance, which can be mitigated by selecting devices from the same lot and symmetrical layout design. During switching, variations in VGS(th) and inductance lead to transient current imbalance, necessitating similar countermeasures. Avalanche operation risks concentrating current on weaker devices. Parasitic oscillations occur more frequently in parallel configurations due to resonant circuits formed by gate and drain inductances and capacitances, which can be suppressed by adding gate resistors.
应用说明
Power MOSFET Application Note
PDF 3.23 MB 日本語
AI 生成的摘要: Absolute maximum ratings define safe operational limits for MOSFETs, including voltage, current, and temperature thresholds to prevent device damage. Electrical characteristics specify parameters like breakdown voltage, threshold voltage, on-resistance, capacitances, and switching times. Allowable channel dissipation decreases as case temperature rises, calculated by a specific formula. The safe operating area (SOA) outlines five limiting conditions: current rating, on-resistance, channel dissipation, secondary breakdown, and voltage rating, ensuring reliable MOSFET operation under various conditions.
应用说明
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
AI 生成的摘要: The document outlines derating standards for Power MOSFETs and IGBTs, emphasizing temperature, humidity, voltage, current, and power limits to ensure device reliability. It discusses package type selection between hermetic sealed and plastic molded types, highlighting the advantages of surface-mount packages for miniaturization. It also details precautions for physical handling, including proper lead forming, cutting, and mounting techniques to prevent stress and damage during installation.
应用说明
Avalanche Guarantee for Power MOS FET Application Note (D18464EJ2V0AN00)
PDF 585 KB 日本語
AI 生成的摘要: The document outlines avalanche operation and failure mechanisms of power MOSFETs, detailing two failure modes: current failure and energy failure. It explains measurement waveforms during avalanche events and methods to apply destructive and rated avalanche breakdown values. The guide covers derating avalanche capability based on channel temperature and distinguishes single pulse from repetitive pulse operations. It also includes procedures for avalanche testing and safe operation judgment using waveform analysis and temperature calculations.
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