封装信息
| Pkg. Type: | QFN |
| Pkg. Code: | LHS |
| Lead Count (#): | 16 |
| Pkg. Dimensions (mm): | 3.00 x 3.00 x 0.90 |
| Pitch (mm): | 0.5 |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 2 |
| Pb (Lead) Free | Yes |
| ECCN (US) | EAR99 |
| HTS (US) | 8541.29.0040 |
产品属性
| Lead Count (#) | 16 |
| Carrier Type | Reel |
| Moisture Sensitivity Level (MSL) | 2 |
| Pitch (mm) | 0.5 |
| Pkg. Dimensions (mm) | 3.0 x 3.0 x 0.90 |
| Pb (Lead) Free | Yes |
| Pb Free Category | Pb-Free 100% Matte Tin Plate w/Anneal-e3 |
| Temp. Range (°C) | -55 to +125°C |
| CCB (pF) | 0.6 |
| CEB (pF) | 0.5 |
| Channels (#) | 5 |
| FT (GHz) | 5.5 |
| ICBO (nA) | 0.1 |
| ICEO (nA) | 2 |
| Length (mm) | 3.0 |
| MOQ | 6000 |
| NF (dB) | 3.5 |
| NPN or PNP | PNP |
| Offset Voltage (Max) (mV) | 5 |
| Pkg. Type | QFN |
| Qualification Level | Standard |
| Thickness (mm) | 0.90 |
| V (BR) CBO (V) | 15 |
| V (BR) CEO (V) | 15 |
| V (BR) EBO (V) | 5 |
| Width (mm) | 3.0 |
| hFE | 60 |
有关 HFA3128 的资源
描述
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The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. Application note AN9315 illustrates the use of these devices as RF amplifiers.