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Dual Power Distribution Controller

封装信息

CAD 模型:View CAD Model
Pkg. Type:SOICN
Pkg. Code:MSU
Lead Count (#):14
Pkg. Dimensions (mm):8.69 x 3.94 x 0.00
Pitch (mm):1.27

环境和出口类别

Pb (Lead) FreeNo
Moisture Sensitivity Level (MSL)
ECCN (US)
HTS (US)

产品属性

Lead Count (#)14
Carrier TypeTube
Pb (Lead) FreeNo
Temp. Range (°C)0 to +70°C
Bias Voltage Range (V)12 - 12
Controlled Voltages (V)12 - 12
Internal / External FETExt
Length (mm)8.7
MOQ400
Outputs (#)2
Parametric CategoryHot Swap/Hot Plug Controllers
Pitch (mm)1.3
Pkg. Dimensions (mm)8.7 x 3.9 x 0.00
Pkg. TypeSOICN
Qualification LevelStandard
Regulation or Latch-Off for OvercurrentCurrent Regulation
ReportingPGOOD for UV or OC
UV/OV FeatureUV Notification
VBIAS (Max) (V)12
VBIAS (Min) (V)12
Width (mm)3.9

描述

Support is limited to customers who have already adopted these products.

The HIP1012A is a HOT SWAP dual supply power distribution controller. Two external N-Channel MOSFETs are driven to distribute power while providing load fault isolation. At turn-on, the gate of each external N-Channel MOSFET is charged with a 10µA current source. Capacitors on each gate (see the Typical Application Diagram), create a programmable ramp (soft turn-on) to control inrush currents. A built in charge pump supplies the gate drive for the 12V supply N-Channel MOSFET switch. Overcurrent protection is facilitated by two external current sense resistors. When the current through either resistor exceeds the user programmed value the controller enters the current regulation mode. The time-out capacitor, CTIM, starts charging as the controller enters the time out period. Once CTIM charges to a 2V threshold, the N-Channel MOSFETs are latched off. In the event of a fault at least three times the current limit level, the N-Channel MOSFET gates are pulled low immediately before entering time out period. The controller is reset by a rising edge on either PWRON pin. Choosing the voltage selection mode the HIP1012 controls either +12V/5V or +3. 3V/+5V supplies.