封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | SOICN |
| Pkg. Code: | MSU |
| Lead Count (#): | 14 |
| Pkg. Dimensions (mm): | 8.69 x 3.94 x 0.00 |
| Pitch (mm): | 1.27 |
环境和出口类别
| Pb (Lead) Free | No |
| Moisture Sensitivity Level (MSL) | |
| ECCN (US) | |
| HTS (US) |
产品属性
| Lead Count (#) | 14 |
| Carrier Type | Tube |
| Pb (Lead) Free | No |
| Temp. Range (°C) | 0 to +70°C |
| Bias Voltage Range (V) | 12 - 12 |
| Controlled Voltages (V) | 12 - 12 |
| Internal / External FET | Ext |
| Length (mm) | 8.7 |
| MOQ | 800 |
| Outputs (#) | 2 |
| Parametric Category | Hot Swap/Hot Plug Controllers |
| Pitch (mm) | 1.3 |
| Pkg. Dimensions (mm) | 8.7 x 3.9 x 0.00 |
| Pkg. Type | SOICN |
| Qualification Level | Standard |
| Regulation or Latch-Off for Overcurrent | Latch-Off |
| Reporting | PGOOD for UV or OC |
| UV/OV Feature | UV Notification |
| VBIAS (Max) (V) | 12 |
| VBIAS (Min) (V) | 12 |
| Width (mm) | 3.9 |
有关 HIP1013 的资源
描述
Support is limited to customers who have already adopted these products.
The HIP1013 is a low cost HOT SWAP dual supply power distribution controller. Two external N-Channel MOSFETs are driven to distribute power while providing load fault isolation. At turn-on, the gate of each external N-Channel MOSFET is charged with a 10µA current source. Capacitors on each gate (see the Typical Application Diagram), create a programmable ramp (soft turn-on) to control inrush currents. A built in charge pump supplies the gate drive for the 12V supply N-Channel MOSFET switch. Over current protection is facilitated by two external current sense resistors. When the current through either resistor exceeds the user programmed value the N-Channel MOSFETs are latched off by the HIP1013. The controller is reset by a rising edge on either PWRON pin. Choosing the voltage selection mode the HIP1013 controls either +12V/5V or +3. 3V/+5V supplies. Although pin compatible with the HIP1012 device, the HIP1013 does not offer current regulation during an OC event.