封装信息
| Pitch (mm) | 1.27 |
| Lead Count (#) | 8 |
| Pkg. Dimensions (mm) | 4.9 x 3.9 x 1.5 |
| Pkg. Code | MBY |
| Pkg. Type | SOICN |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| ECCN (US) | EAR99 |
| HTS (US) | 8542.39.0090 |
| RoHS (HIP2100IBZT) | 下载 |
产品属性
| Lead Count (#) | 8 |
| Carrier Type | Reel |
| Moisture Sensitivity Level (MSL) | 1 |
| Pitch (mm) | 1.3 |
| Pkg. Dimensions (mm) | 4.9 x 3.9 x 0.00 |
| Pb (Lead) Free | Yes |
| Pb Free Category | Pb-Free 100% Matte Tin Plate w/Anneal-e3 |
| Temp. Range | -40 to +85°C |
| Country of Assembly | China |
| Country of Wafer Fabrication | United States |
| Price (USD) | 2.95619 |
| Bootstrap Supply Voltage (Max) (V) | 114 |
| Charge Pump | No |
| Fall Time | 10 |
| Input Logic Level | CMOS |
| Length (mm) | 4.9 |
| MOQ | 2500 |
| Parametric Category | Half-Bridge FET Drivers |
| Peak Pull-down Current (A) | 2 |
| Peak Pull-up Current (A) | 2 |
| Pkg. Type | SOICN |
| Qualification Level | Standard |
| Rise Time (μs) | .010 |
| Thickness (mm) | 0.00 |
| Turn-Off Prop Delay (ns) | 20 |
| Turn-On Prop Delay (ns) | 20 |
| VBIAS (Max) (V) | 14 |
| Width (mm) | 3.9 |
有关 HIP2100 的资源
描述
The HIP2100 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply.