封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | SBDIP |
| Pkg. Code: | DBB |
| Lead Count (#): | 16 |
| Pkg. Dimensions (mm): | 20.32 x 7.49 x 2.41 |
| Pitch (mm): | 2.54 |
环境和出口类别
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Pb (Lead) Free | Exempt |
| ECCN (US) | 9A515.e.1 |
| HTS (US) | 8542.39.0090 |
产品属性
| Pkg. Type | SBDIP |
| Lead Count (#) | 16 |
| Carrier Type | Tube |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Pitch (mm) | 2.5 |
| Pkg. Dimensions (mm) | 20.3 x 7.5 x 2.41 |
| DLA SMD | 5962F9955801VEC |
| Pb (Lead) Free | Exempt |
| Pb Free Category | Gold Plate over compliant Undercoat-e4 |
| MOQ | 25 |
| Temp. Range (°C) | -55 to +125°C |
| CAGE code | 34371 |
| Control Mode | Voltage, Peak Current Mode |
| DSEE (MeV·cm2/mg) | 86.3 |
| Die Sale Availability? | Yes |
| Duty Cycle (Max) (%) | 50 |
| Flow | RH Hermetic |
| Length (mm) | 20.3 |
| Models Available | iSIM |
| No-Load Operating Current | 25 |
| Operating Freq (Max) (MHz) | 0.5 |
| PROTO Availability? | Yes |
| Phase of Outputs | Out of Phase |
| Phases (Max) | 2 |
| Qualification Level | Class V |
| Quiescent Current | 55µA |
| Rating | Space |
| SMD URL | 5962-02511 |
| Supply Voltage (max) (V) | 30 - 30 |
| Supply Voltage (min) (V) | 12 - 12 |
| Switching Frequency (max) (kHz) | 3000 |
| Switching Frequency (min) (kHz) | 10 |
| TID HDR (krad(Si)) | 300 |
| Thickness (mm) | 2.41 |
| Topology | Boost, Flyback, Forward, Full Bridge, Half Bridge, Push-Pull |
| UVLO Rising (V) | 8.4 |
| VDD1 (V) | 12 - 30 |
| VREF (V) | 5.1 |
| Width (mm) | 7.5 |
有关 HS-1825ARH 的资源
描述
The radiation hardened HS-1825ARH, HS-1825AEH pulse width modulator is designed to be used in high-frequency switched-mode power supplies and can be used in either current-mode or voltage-mode. It is well suited for single-ended boost converter applications. Device features include a precision voltage reference, low power start-up circuit, high-frequency oscillator, wide-band error amplifier and fast current-limit comparator. The use of proprietary process capabilities and unique design techniques results in fast propagation delay times and high output current over a wide range of output voltages. Constructed with the Intersil radiation hardened Silicon Gate (RSG) Dielectric Isolation BiCMOS process, the HS-1825ARH, HS-1825AEH have been specifically designed to provide highly reliable performance when exposed to harsh radiation environments.