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Radiation Hardened High-speed, Dual Output PWM

封装信息

Pitch (mm) 1.27
Lead Count (#) 16
Pkg. Type CFP
Pkg. Dimensions (mm) 10.41 x 6.86 x 0.00
Pkg. Code KBV

环境和出口类别

Moisture Sensitivity Level (MSL) Not Applicable
Pb (Lead) Free Exempt
ECCN (US) 9A515
HTS (US)

产品属性

Pkg. Type CFP
Lead Count (#) 16
Carrier Type Tray
Moisture Sensitivity Level (MSL) Not Applicable
Pitch (mm) 1.3
Pkg. Dimensions (mm) 10.4 x 6.9 x 0.00
Pb (Lead) Free Exempt
Pb Free Category Gold Plate over compliant Undercoat-e4
MOQ 1
Temp. Range -55 to +125°C
CAGE code 34371
Control Mode Voltage, Peak Current Mode
Die Sale Availability? Yes
Duty Cycle (Max) (%) 50
Flow RH Hermetic
Length (mm) 10.4
Models Available iSIM
No-Load Operating Current 25
Operating Freq (Max) (MHz) 0.5
PROTO Availability? Yes
Phase of Outputs Out of Phase
Phases (Max) 2
Qualification Level EM
Quiescent Current 55µA
Rating Space
SMD URL
Supply Voltage (max) (V) 30 - 30
Supply Voltage (min) (V) 12 - 12
Switching Frequency (max) (kHz) 3000
Switching Frequency (min) (kHz) 10
TID HDR (krad(Si)) 300
Thickness (mm) 0
Topology Boost, Flyback, Forward, Full Bridge, Half Bridge, Push-Pull
UVLO Rising (V) 8.4
VDD1 (V) 12 - 30
VREF (V) 5.1
Width (mm) 6.9

描述

The radiation hardened HS-1825ARH, HS-1825AEH pulse width modulator is designed to be used in high-frequency switched-mode power supplies and can be used in either current-mode or voltage-mode. It is well suited for single-ended boost converter applications. Device features include a precision voltage reference, low power start-up circuit, high-frequency oscillator, wide-band error amplifier and fast current-limit comparator. The use of proprietary process capabilities and unique design techniques results in fast propagation delay times and high output current over a wide range of output voltages. Constructed with the Intersil radiation hardened Silicon Gate (RSG) Dielectric Isolation BiCMOS process, the HS-1825ARH, HS-1825AEH have been specifically designed to provide highly reliable performance when exposed to harsh radiation environments.