特性
- Electrically screened to DSCC SMD # 5962-01509
- QML qualified per MIL-PRF-38535 requirements
- Radiation environment
- High Dose Rate: 300krad(SI) (Max)
- Low Dose Rate: 50krad(SI) (Max)
- SEL immune: Dielectrically isolated
- SEU immune: 35MeV/mg/cm2
- SEU cross-section at 89MeV/mg/cm2: 5x10-6cm2
- Low start-up current: 100µA (Typ)
- Fast propagation delay: 80ns (Typ)
- Supply voltage range: 12V to 20V
- High output drive: 1A (Peak, Typ)
- Undervoltage lockout: 8.8V start (Typ), 8.2V stop (Typ)
描述
The IS-1845ASRH, IS-1845ASEH are designed to be used in switching power supplies operating in current-mode. The rising edge of the on-chip oscillator turns on the output. Turn-off is controlled by the current sense comparator and occurs when the sensed current reaches a peak controlled by the error amplifier. Constructed with Renesas' Rad Hard Silicon Gate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide a high level of immunity to single event transients. All specified parameters are ensured and tested for 300krad(Si) total dose performance at a high dose rate and 50krad(Si) total dose at a low dose rate. Detailed Electrical Specifications for these devices are contained in the SMD 5962-01509.
产品参数
属性 | 值 |
---|---|
Rating | Space |
Control Mode | Voltage, Peak Current Mode |
Phases (Max) | 1 |
No-Load Operating Current | 17 |
Quiescent Current | 500µA |
Supply Voltage (min) (V) | 12 - 12 |
Supply Voltage (max) (V) | 30 - 30 |
Switching Frequency (min) (kHz) | 4 |
Switching Frequency (max) (kHz) | 2000 |
Topology | Buck, Boost, Flyback, Forward |
VREF (V) | 5 |
Temp. Range (°C) | -55 to +125°C |
TID HDR (krad(Si)) | 300 |
TID LDR (krad(Si)) | 50 |
DSEE (MeV·cm2/mg) | 89.1 |
Flow | RH Hermetic |
Qualification Level | Class V, EM |
Die Sale Availability? | Yes |
PROTO Availability? | Yes |
应用
- Current-mode switching power supplies
- Control of high current FET drivers
- Motor speed and direction control
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