封装信息
| Pkg. Type | DIE |
环境和出口类别
| Pb (Lead) Free | No |
| Moisture Sensitivity Level (MSL) | |
| ECCN (US) | |
| HTS (US) |
产品属性
| Pkg. Type | DIE |
| DLA SMD | 5962F0150902V9A |
| Pb (Lead) Free | No |
| MOQ | 100 |
| Temp. Range | -55 to +125°C |
| CAGE code | 34371 |
| Control Mode | Voltage, Peak Current Mode |
| DSEE (MeV·cm2/mg) | 89.1 |
| Die Sale Availability? | Yes |
| Duty Cycle (Max) (%) | 50 |
| Flow | RH Hermetic |
| No-Load Operating Current | 17 |
| Operating Freq (Max) (MHz) | 0.5 |
| PROTO Availability? | Yes |
| Phases (Max) | 1 |
| Qualification Level | Class V |
| Quiescent Current | 500µA |
| Rating | Space |
| SMD URL | |
| Supply Voltage (max) (V) | 30 - 30 |
| Supply Voltage (min) (V) | 12 - 12 |
| Switching Frequency (max) (kHz) | 2000 |
| Switching Frequency (min) (kHz) | 4 |
| TID HDR (krad(Si)) | 300 |
| TID LDR (krad(Si)) | 50 |
| Topology | Buck, Boost, Flyback, Forward |
| UVLO Rising (V) | 8.8 |
| VDD1 (V) | 12 - 20 |
| VREF (V) | 5 |
描述
The IS-1845ASRH, IS-1845ASEH are designed to be used in switching power supplies operating in current-mode. The rising edge of the on-chip oscillator turns on the output. Turn-off is controlled by the current sense comparator and occurs when the sensed current reaches a peak controlled by the error amplifier. Constructed with Renesas' Rad Hard Silicon Gate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide a high level of immunity to single event transients. All specified parameters are ensured and tested for 300krad(Si) total dose performance at a high dose rate and 50krad(Si) total dose at a low dose rate. Detailed Electrical Specifications for these devices are contained in the SMD 5962-01509.