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Single Event Radiation Hardened High Speed, Current Mode PWM

封装信息

CAD 模型: View CAD Model
Pkg. Type: DIE
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm):
Pitch (mm):

环境和出口类别

Moisture Sensitivity Level (MSL)
Pb (Lead) Free No
ECCN (US) EAR99
HTS (US) 8542.39.0090

产品属性

Pkg. Type DIE
DLA SMD 5962F0150902V9A
Pb (Lead) Free No
MOQ 100
Temp. Range (°C) -55 to +125°C
CAGE code 34371
Control Mode Voltage, Peak Current Mode
DSEE (MeV·cm2/mg) 89.1
Die Sale Availability? Yes
Duty Cycle (Max) (%) 50
Flow RH Hermetic
No-Load Operating Current 17
Operating Freq (Max) (MHz) 0.5
PROTO Availability? Yes
Phases (Max) 1
Qualification Level Class V
Quiescent Current 500µA
Rating Space
SMD URL 5962-01509
Supply Voltage (max) (V) 30 - 30
Supply Voltage (min) (V) 12 - 12
Switching Frequency (max) (kHz) 2000
Switching Frequency (min) (kHz) 4
TID HDR (krad(Si)) 300
TID LDR (krad(Si)) 50
Topology Buck, Boost, Flyback, Forward
UVLO Rising (V) 8.8
VDD1 (V) 12 - 20
VREF (V) 5

描述

The IS-1845ASRH, IS-1845ASEH are designed to be used in switching power supplies operating in current-mode. The rising edge of the on-chip oscillator turns on the output. Turn-off is controlled by the current sense comparator and occurs when the sensed current reaches a peak controlled by the error amplifier. Constructed with Renesas' Rad Hard Silicon Gate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide a high level of immunity to single event transients. All specified parameters are ensured and tested for 300krad(Si) total dose performance at a high dose rate and 50krad(Si) total dose at a low dose rate. Detailed Electrical Specifications for these devices are contained in the SMD 5962-01509.