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High Speed, Current Mode PWM

封装信息

Pitch (mm) 1.27
Lead Count (#) 18
Pkg. Type CFP
Pkg. Dimensions (mm) 11.18 x 8.38 x 0.00
Pkg. Code KBK

环境和出口类别

Moisture Sensitivity Level (MSL) Not Applicable
Pb (Lead) Free Exempt
ECCN (US) 9A515
HTS (US)

产品属性

Pkg. Type CFP
Lead Count (#) 18
Carrier Type Tray
Moisture Sensitivity Level (MSL) Not Applicable
Pitch (mm) 1.3
Pkg. Dimensions (mm) 11.2 x 8.4 x 0.00
DLA SMD 5962F0150901QXC
Pb (Lead) Free Exempt
Pb Free Category Gold Plate over compliant Undercoat-e4
MOQ 25
Temp. Range -55 to +125°C
CAGE code 34371
Control Mode Voltage, Peak Current Mode
DSEE (MeV·cm2/mg) 89.1
Die Sale Availability? Yes
Duty Cycle (Max) (%) 50
Flow RH Hermetic
Length (mm) 11.2
No-Load Operating Current 17
Operating Freq (Max) (MHz) 0.5
PROTO Availability? Yes
Phases (Max) 1
Qualification Level Class Q
Quiescent Current 500µA
Rating Space
SMD URL
Supply Voltage (max) (V) 30 - 30
Supply Voltage (min) (V) 12 - 12
Switching Frequency (max) (kHz) 2000
Switching Frequency (min) (kHz) 4
TID HDR (krad(Si)) 300
TID LDR (krad(Si)) 50
Thickness (mm) 0
Topology Buck, Boost, Flyback, Forward
UVLO Rising (V) 8.8
VDD1 (V) 12 - 20
VREF (V) 5
Width (mm) 8.4

描述

The IS-1845ASRH, IS-1845ASEH are designed to be used in switching power supplies operating in current-mode. The rising edge of the on-chip oscillator turns on the output. Turn-off is controlled by the current sense comparator and occurs when the sensed current reaches a peak controlled by the error amplifier. Constructed with Renesas' Rad Hard Silicon Gate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide a high level of immunity to single event transients. All specified parameters are ensured and tested for 300krad(Si) total dose performance at a high dose rate and 50krad(Si) total dose at a low dose rate. Detailed Electrical Specifications for these devices are contained in the SMD 5962-01509.