跳转到主要内容
High Speed, Current Mode PWM

封装信息

CAD 模型:View CAD Model
Pkg. Type:CFP
Pkg. Code:KBK
Lead Count (#):18
Pkg. Dimensions (mm):11.18 x 8.38 x 0.00
Pitch (mm):1.27

环境和出口类别

Moisture Sensitivity Level (MSL)Not Applicable
Pb (Lead) FreeExempt
ECCN (US)9A515.e.1
HTS (US)8542.39.0090

产品属性

Pkg. TypeCFP
Lead Count (#)18
Carrier TypeTray
Moisture Sensitivity Level (MSL)Not Applicable
Pitch (mm)1.3
Pkg. Dimensions (mm)11.2 x 8.4 x 0.00
DLA SMD5962F0150901VXC
Pb (Lead) FreeExempt
Pb Free CategoryGold Plate over compliant Undercoat-e4
MOQ25
Temp. Range (°C)-55 to +125°C
CAGE code34371
Control ModeVoltage, Peak Current Mode
DSEE (MeV·cm2/mg)89.1
Die Sale Availability?Yes
Duty Cycle (Max) (%)50
FlowRH Hermetic
Length (mm)11.2
No-Load Operating Current17
Operating Freq (Max) (MHz)0.5
PROTO Availability?Yes
Phases (Max)1
Qualification LevelClass V
Quiescent Current500µA
RatingSpace
SMD URL5962-01509
Supply Voltage (max) (V)30 - 30
Supply Voltage (min) (V)12 - 12
Switching Frequency (max) (kHz)2000
Switching Frequency (min) (kHz)4
TID HDR (krad(Si))300
TID LDR (krad(Si))50
TopologyBuck, Boost, Flyback, Forward
UVLO Rising (V)8.8
VDD1 (V)12 - 20
VREF (V)5
Width (mm)8.4

描述

The IS-1845ASRH, IS-1845ASEH are designed to be used in switching power supplies operating in current-mode. The rising edge of the on-chip oscillator turns on the output. Turn-off is controlled by the current sense comparator and occurs when the sensed current reaches a peak controlled by the error amplifier. Constructed with Renesas' Rad Hard Silicon Gate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide a high level of immunity to single event transients. All specified parameters are ensured and tested for 300krad(Si) total dose performance at a high dose rate and 50krad(Si) total dose at a low dose rate. Detailed Electrical Specifications for these devices are contained in the SMD 5962-01509.