特性
- Fully Integrated Synchronous Buck Regulator
- PWM Fixed Output Voltage Options
- 1.8V, 1.5V or 1.2V with ISL6410 (VIN = 3.3V)
- 3.3V, 1.8V or 1.2V with ISL6410A (VIN = 5.0V)
- Continuous Output Current . . . . . . . . . . . . . . . . . . 600mA
- Ultra-Compact DC-DC Converter Design
- Stable with Small Ceramic Output Capacitors
- High Conversion Efficiency
- Extensive Circuit Protection and Monitoring features
- Overvoltage, UVLO
- Overcurrent
- Thermal Shutdown
- Available in MSOP and QFN packages
- QFN Package:
- Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package footprint, which improves PCB efficiency and has a thinner profile
- Pb-Free Packaging Available
ISL6410A Functional Diagram
描述
The ISL6410, ISL6410A are synchronous current-mode PWM regulators designed to provide a total DC/DC solution for microcontrollers, microprocessors, CPLDs, FPGAs, core processors/BBP/MAC, and ASICs. The ISL6410 should be selected for applications using 3.3V ±10% as an input voltage and the ISL6410A in applications requiring 5.0V ±10%. These synchronous current mode PWM regulators have integrated N- and P-Channel power MOSFETs and provide pre-set pin programmable outputs. Synchronous rectification with internal MOSFETs is used to achieve higher efficiency and a reduced external component count. The operating frequency of 750kHz typical allows the use of small inductor and capacitor values. The device can be synchronized to an external clock signal in the range of 500kHz to 1MHz. A power good signal PG is generated when the output voltage falls outside the regulation limits. Other features include overcurrent protection and thermal overload shutdown. The ISL6410, ISL6410A are available in an MSOP 10 lead package.
应用
- CPUs, DSP, CPLDs, FPGAs
- ASICs
- DVD and DSL applications
- WLAN Cards
- Generic 5V to 33V Conversion
| Part Number | Status | Samples | Stock | RoHS | Package | Carrier Type | MOQ |
|---|---|---|---|---|---|---|---|
| ISL6410AIUZ | Obsolete | N/A | Out of Stock | RoHS:EN | MSOP | Tube | 1960 |
| ISL6410AIUZ-TK | Obsolete | N/A | In Stock | RoHS:EN | MSOP | Reel | 2000 |
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- 应用说明英语PDF 592 KB an9208 2018年2月01日AI 生成的摘要: The document discusses high frequency power converters, focusing on ZVS-QRC and multi-resonant topologies that reduce switching losses by operating switches at zero voltage. It highlights challenges like EMI and high voltage stress. The SEPIC converter is introduced, explaining its ability to buck or boost voltage without polarity inversion. The document details SEPIC’s operating modes, voltage-current relationships, and the importance of inductor values for continuous or discontinuous conduction modes.
- 产品变更通告英语PDF 398 KB PCN15046 2016年1月07日
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 650 KB an9210 2001年12月21日AI 生成的摘要: This document presents a new PSPICE subcircuit model for power MOSFETs with global temperature options. It details synchronous rectifier circuit operation, including gate biasing and conduction modes. The model accurately simulates switching waveforms, diode recovery, and temperature-dependent efficiency. Measured and modeled data show excellent correlation for output characteristics, threshold voltage, breakdown voltage, and on-resistance across temperature ranges. Limitations in linear mode modeling are noted due to PSPICE assumptions.
- 应用说明英语PDF 387 KB an9209 1998年8月13日AI 生成的摘要: The document presents an empirical SPICE-2 subcircuit model for power MOSFETs, accurately simulating static and dynamic behaviors including first and third-quadrant operations and avalanche breakdown. The model aligns closely with measured data and is compatible with all SPICE versions without code modification. It uses parameters derived from datasheets or simple measurements. The document also includes detailed comparisons of measured and calculated curves for transfer, output, switching, and diode recovery characteristics. Additionally, it provides legal and usage disclaimers from Renesas Electronics.
- 应用说明英语PDF 349 KB an7244 1998年8月12日AI 生成的摘要: Power MOSFETs feature a positive temperature coefficient of resistance, enhancing stability and preventing thermal runaway by increasing resistance as temperature rises. Their gate terminals have extremely high input impedance with minimal leakage current, dominated by capacitive characteristics. Switching speed depends on gate resistance and capacitance, with polysilicon gates offering higher resistance and lower frequency operation than metal gates. MOSFETs require a gate-to-source voltage exceeding a threshold (around 2V) and typically about 10V to fully saturate and deliver maximum drain current. TTL and CMOS drivers differ in voltage capability and switching speed, often requiring buffering for optimal performance.
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- 应用说明英语PDF 592 KB an9208 2018年2月01日AI 生成的摘要: The document discusses high frequency power converters, focusing on ZVS-QRC and multi-resonant topologies that reduce switching losses by operating switches at zero voltage. It highlights challenges like EMI and high voltage stress. The SEPIC converter is introduced, explaining its ability to buck or boost voltage without polarity inversion. The document details SEPIC’s operating modes, voltage-current relationships, and the importance of inductor values for continuous or discontinuous conduction modes.
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 650 KB an9210 2001年12月21日AI 生成的摘要: This document presents a new PSPICE subcircuit model for power MOSFETs with global temperature options. It details synchronous rectifier circuit operation, including gate biasing and conduction modes. The model accurately simulates switching waveforms, diode recovery, and temperature-dependent efficiency. Measured and modeled data show excellent correlation for output characteristics, threshold voltage, breakdown voltage, and on-resistance across temperature ranges. Limitations in linear mode modeling are noted due to PSPICE assumptions.
- 应用说明英语PDF 387 KB an9209 1998年8月13日AI 生成的摘要: The document presents an empirical SPICE-2 subcircuit model for power MOSFETs, accurately simulating static and dynamic behaviors including first and third-quadrant operations and avalanche breakdown. The model aligns closely with measured data and is compatible with all SPICE versions without code modification. It uses parameters derived from datasheets or simple measurements. The document also includes detailed comparisons of measured and calculated curves for transfer, output, switching, and diode recovery characteristics. Additionally, it provides legal and usage disclaimers from Renesas Electronics.查看更多 (6)
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- 产品变更通告英语PDF 398 KB PCN15046 2016年1月07日
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