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Buck and Synchronous-Rectifier Pulse-Width Modulator (PWM) Controller

封装信息

CAD 模型:View CAD Model
Pkg. Type:SOICN
Pkg. Code:MSU
Lead Count (#):14
Pkg. Dimensions (mm):8.7 x 3.9 x 0.00
Pitch (mm):1.3

环境和出口类别

Pb (Lead) FreeNo
Moisture Sensitivity Level (MSL)
ECCN (US)
HTS (US)

产品属性

Lead Count (#)14
Carrier TypeReel
Pb (Lead) FreeNo
Temp. Range (°C)0 to +70°C
Bias Voltage Range (V)12 - 12
IS (Typical)5
Input Voltage (Max) (V)12
Input Voltage (Max) [Rail 1] (V)12 - 12
Input Voltage (Min) (V)2.5
Input Voltage (Min) [Rail 1] (V)2.5
Length (mm)8.7
MOQ2500
Output Voltage (Max) (V)12
Output Voltage (Min) (V)1.2
Output Voltage (Min) [Rail 1] (V)1.2
Parametric CategoryBuck Controllers (External FETs)
Pitch (mm)1.3
Pkg. Dimensions (mm)8.7 x 3.9 x 0.00
Pkg. TypeSOICN
Qualification LevelStandard
Topology [Rail 1]Buck
VBIAS (Max) (V)12
VBIAS (Min) (V)12
Width (mm)3.9

描述

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The ISL6525 provides complete control and protection for a DC-DC converter optimized for high-performance microprocessor applications. It is designed to drive two N Channel MOSFETs in a synchronous-rectified buck topology. The ISL6525 integrates all of the control, output adjustment, monitoring and protection functions into a single package. A programmable delay time for the PGOOD signal makes it especially suitable for the VTT regulation in VRM8. 5 applications. The output voltage of the converter can be precisely regulated to as low as 1. 20V, with a maximum tolerance of ±1% over temperature and line voltage variations. The ISL6525 provides simple, single feedback loop, voltage-mode control with fast transient response. It includes a 200kHz free-running triangle-wave oscillator that is adjustable from below 50kHz to over 1MHz. The error amplifier features a 15MHz gain-bandwidth product and 6V/µs slew rate which enables high converter bandwidth for fast transient performance. The resulting PWM duty ratio ranges from 0% to 100%. The ISL6525 protects against over-current conditions by inhibiting PWM operation. The ISL6525 monitors the current by using the rDS(ON) of the upper MOSFET which eliminates the need for a current sensing resistor.