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Radiation Hardened 100µA and 1mA Precision Current Source

封装信息

Pitch (mm) 0
Pkg. Type DIE
Pkg. Dimensions (mm) 0.0 x 0.0 x 0.00

环境和出口类别

Moisture Sensitivity Level (MSL) Not Applicable
Pb (Lead) Free Yes
ECCN (US) EAR99
HTS (US)

产品属性

Pkg. Type DIE
Carrier Type Die Waffle Pack
Moisture Sensitivity Level (MSL) Not Applicable
Pitch (mm) 0
Pkg. Dimensions (mm) 0.0 x 0.0 x 0.00
Pb (Lead) Free Yes
Pb Free Category Not Applicable
MOQ 1
CAGE code 34371
Accuracy ±0.3%
Continuous Output Current (mA) 1
DSEE (MeV·cm2/mg) 86
Die Sale Availability? Yes
Flow RH Hermetic
Length (mm) 0
Output Impedance 14 MΩ
Output Impedance (MΩ) 14
PROTO Availability? Yes
Qualification Level EM
Rating Space
Supply Voltage (V) 3 - 40
Supply Voltage (max) (V) 40 - 40
Supply Voltage (min) (V) 3 - 3
TID HDR (krad(Si)) 100
TID LDR (krad(Si)) 75
Target applications High Side, Low Side, Dual Side
Temp. Range -40 to +125°C
Thickness (mm) 0
Width (mm) 0

描述

The ISL70592SEH is a radiation hardened precision 100µA and 1mA current source IC. The device has excellent accuracy of ±1% over a wide operating voltage range of 3V to 40V and over a temperature range of -55 °C to +125 °C. Fabricated with the Renesas proprietary PR40 Silicon On Insulator (SOI) process, the device is immune to single event latch-up. The high output impedance of the device makes it insensitive to voltage drops across long lines. It can withstand a forward operating voltage of 40V and a reverse voltage of -0.5V. The ISL7x591SEH and ISL7x592SEH are two terminal floating current sources allowing them to be used in high-side, low-side, and dual-side load applications such as sensor excitation, biasing networks, low voltage references, floating voltage references, and ramp generators. The current sources were primarily designed for thermistor and other sensor excitation applications widely used in space crafts. The ISL7x591SEH and ISL7x592SEH are available in a 4 Ld ceramic flatpack and die forms. The temperature range is -55 °C to +125 °C.