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瑞萨电子 (Renesas Electronics Corporation)
NEW
Radiation Tolerant 500MHz to 6.5GHz RF Amplifier

封装信息

CAD 模型:View CAD Model
Pkg. Type:QFN
Pkg. Code:LYE
Lead Count (#):16
Pkg. Dimensions (mm):3.0 x 3.0 x 0.90
Pitch (mm):0.5

环境和出口类别

Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

产品属性

TID LDR (krad(Si))50
Frequency Range (MHz)500 - 6500
Gain (dB)16.6dB
Noise Figure (dB)2.2
OP1dB (dBm)21.5
Input Supply Range (V)3.15 - 5.25
DSEE (MeV·cm2/mg)43
Lead Count (#)16
Pkg. TypeQFN
Carrier TypeTray
Length (mm)3
MOQ25
Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
Pb Free CategoryNickel/Palladium/Gold-Silver - e4
Pitch (mm)0.5
Pkg. Dimensions (mm)3.0 x 3.0 x 0.90
Temp. Range (°C)-55 to +105°C
Thickness (mm)0.9
Width (mm)3

描述

The ISL74324M is a radiation tolerant 500MHz to 6500MHz SiGe BiCMOS high-gain broadband radio-frequency (RF) amplifier. The combination of a low noise figure (NF) and high linearity performance allows the device to be used in both receiver and transmitter applications.

The ISL74324M operates with a single 5V or 3.3V power supply using a nominal 60mA. With a supply voltage of 5V, the ISL74324M provides 16.6dB gain with +38.4dBm OIP3 and 2.2dB noise figure at 4200. Additionally, it is bias adjustable and can be operated as low as at 40mA for improved efficiency. This device incorporates a convenient shutdown capability through the STBY pin.

The ISL74324M is packaged in a 3mm x 3mm, 16-pin QFN with 50Ω single-ended RF input and output impedances for ease of integration into the signal path.