特性
- Drives N-Channel FET Full Bridge Including High Side Chop Capability
- Bootstrap Supply Max Voltage to 75VDC
- Drives 1000pF Load at 1MHz in Free Air at +50°C with Rise and Fall Times of Typically 10ns
- User-Programmable Dead Time
- Charge-Pump and Bootstrap Maintain Upper Bias Supplies
- DIS (Disable) Pin Pulls Gates Low
- Input Logic Thresholds Compatible with 5V to 15V Logic Levels
- Very Low Power Consumption
- Undervoltage Protection
- Pb-Free Plus Anneal Available (RoHS Compliant)
描述
Support is limited to customers who have already adopted these products.
The ISL83204A is a high frequency, medium voltage Full Bridge N-Channel FET driver IC, available in 20 lead plastic SOIC and DIP packages. The ISL83204A includes an input comparator used to facilitate the hysteresis and PWM modes of operation. Its HEN (high enable) lead can force current to freewheel in the bottom two external power MOSFETs, maintaining the upper power MOSFETs off. Since it can switch at frequencies up to 1MHz, the ISL83204A is well suited for driving Voice Coil Motors, switching power amplifiers and power supplies. ISL83204A can also drive medium voltage brush motors, and two ISL83204As can be used to drive high performance stepper motors, since the short minimum on-time can provide fine micro-stepping capability. Short propagation delays of approximately 55ns maximize control loop crossover frequencies and dead-times which can be adjusted to near zero to minimize distortion, resulting in precise control of the driven load.
应用
- Medium/Large Voice Coil Motors
- Full Bridge Power Supplies
- Switching Power Amplifiers
- Uninterruptible Power Supplies
- High Performance Motor Controls
- Noise Cancellation Systems
- Battery Powered Vehicles
| Part Number | Status | Samples | Stock | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pitch (mm) | Pkg. Dimensions (mm) | Pb (Lead) Free | Pb Free Category | Temp. Range (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ISL83204AIBZ | Obsolete | N/A | Out of Stock | SOICW | 20# | Tube | 2 | 1.3mm | 12.9 x 7.5 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
| ISL83204AIBZT | Obsolete | N/A | In Stock | SOICW | 20# | Reel | 2 | 1.3mm | 12.9 x 7.5 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
| ISL83204AIPZ | Obsolete | N/A | In Stock | PDIP | 20# | Tube | Not Applicable | 2.5mm | 26.2 x 6.6 x 3.94 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | -40 to +85°C |
- 产品变更通告英语PDF 98 KB PCN12094 2012年12月19日
- 产品变更通告英语PDF 86 KB PCN12086 2012年10月24日
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 576 KB an1116 2004年1月05日AI 生成的摘要: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
推荐文档 (1)
数据手册 (1)
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- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 576 KB an1116 2004年1月05日AI 生成的摘要: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
应用说明和白皮书 (3)
- 产品变更通告英语PDF 98 KB PCN12094 2012年12月19日
- 产品变更通告英语PDF 86 KB PCN12086 2012年10月24日
产品通告(产品变更、EOL 等) (4)
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