特性
- Standard buck controller with integrated switching power MOSFET
- Integrated boot diode
- Input voltage range
- Fixed 5V ±10%
- Variable 5.5V to 25V
- PWM output voltage adjustable from 0.6V to 19V with continuous output current up to 1A
- ±1% VFB tolerance
- Voltage mode control with voltage feed-forward
- Fixed 500kHz switching frequency
- Externally adjustable soft-start time
- Output undervoltage protection
- Enable inputs
- PGOOD output
- Overcurrent protection
- Thermal overload protection
- Internal 5V LDO regulator
- Pb-free (RoHS compliant)
ISL85001 Functional Diagram
描述
The ISL85001 is a high-performance, simple output controller that provides a single, high frequency power solution for a variety of point-of-load applications. The ISL85001 integrates a 1A standard buck PWM controller and switching MOSFET. The PWM controller in the ISL85001 drives an internal switching N-channel power MOSFET and requires an external Schottky diode to generate an output voltage from 0.6V to 19V. The integrated power switch is optimized for excellent thermal performance for up to 1A of output current. The standard buck input voltage range supports a fixed 5V or variable 5.5V to 25V range. The PWM regulator switches at a fixed frequency of 500kHz and utilizes simple voltage mode control with input voltage feed-forward to provide flexibility in component selection and minimize solution size. Protection features include overcurrent, undervoltage and thermal overload protection integrated into the IC. The ISL85001 power-good signal output indicates loss of regulation on the PWM output. ISL85001 is available in a small 4mm x 3mm Dual Flat No-Lead (DFN) package.
应用
- General Purpose
- WLAN Cards-PCMCIA, Cardbus32, MiniPCI Cards-Compact
- Flash Cards
- Hand-Held Instruments
- LCD Panel
- Set-top Box
| Part Number | Status | Samples | Stock | RoHS | Package | Carrier Type |
|---|---|---|---|---|---|---|
| ISL85001IRZ | Obsolete | N/A | In Stock | RoHS:EN | DFN | Tube |
| ISL85001IRZ-T | Obsolete | N/A | Out of Stock | RoHS:EN | DFN | Reel |
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- 产品变更通告英语PDF 326 KB 2021年5月21日
- 应用说明英语PDF 592 KB an9208 2018年2月01日AI 生成的摘要: The document discusses high frequency power converters, focusing on ZVS-QRC and multi-resonant topologies that reduce switching losses by operating switches at zero voltage. It highlights challenges like EMI and high voltage stress. The SEPIC converter is introduced, explaining its ability to buck or boost voltage without polarity inversion. The document details SEPIC’s operating modes, voltage-current relationships, and the importance of inductor values for continuous or discontinuous conduction modes.
- 产品变更通告英语PDF 398 KB PCN15046 2016年1月07日
- 产品变更通告英语PDF 248 KB PCN10055 2010年6月30日
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 249 KB an1488 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design, safety measures, and compliance with laws. Renesas disclaims liability for damages from misuse, modification, or use outside specified conditions. Products are categorized by quality grades for intended applications, excluding life-critical or hazardous systems unless explicitly stated. Users must consult the latest product information and ensure safety and environmental compliance.
- 应用说明英语PDF 650 KB an9210 2001年12月21日AI 生成的摘要: This document presents a new PSPICE subcircuit model for power MOSFETs with global temperature options. It details synchronous rectifier circuit operation, including gate biasing and conduction modes. The model accurately simulates switching waveforms, diode recovery, and temperature-dependent efficiency. Measured and modeled data show excellent correlation for output characteristics, threshold voltage, breakdown voltage, and on-resistance across temperature ranges. Limitations in linear mode modeling are noted due to PSPICE assumptions.
- 应用说明英语PDF 387 KB an9209 1998年8月13日AI 生成的摘要: The document presents an empirical SPICE-2 subcircuit model for power MOSFETs, accurately simulating static and dynamic behaviors including first and third-quadrant operations and avalanche breakdown. The model aligns closely with measured data and is compatible with all SPICE versions without code modification. It uses parameters derived from datasheets or simple measurements. The document also includes detailed comparisons of measured and calculated curves for transfer, output, switching, and diode recovery characteristics. Additionally, it provides legal and usage disclaimers from Renesas Electronics.
- 应用说明英语PDF 349 KB an7244 1998年8月12日AI 生成的摘要: Power MOSFETs feature a positive temperature coefficient of resistance, enhancing stability and preventing thermal runaway by increasing resistance as temperature rises. Their gate terminals have extremely high input impedance with minimal leakage current, dominated by capacitive characteristics. Switching speed depends on gate resistance and capacitance, with polysilicon gates offering higher resistance and lower frequency operation than metal gates. MOSFETs require a gate-to-source voltage exceeding a threshold (around 2V) and typically about 10V to fully saturate and deliver maximum drain current. TTL and CMOS drivers differ in voltage capability and switching speed, often requiring buffering for optimal performance.
- 其他英语PDF 562 KB tb417 2003年12月11日
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- 应用说明英语PDF 592 KB an9208 2018年2月01日AI 生成的摘要: The document discusses high frequency power converters, focusing on ZVS-QRC and multi-resonant topologies that reduce switching losses by operating switches at zero voltage. It highlights challenges like EMI and high voltage stress. The SEPIC converter is introduced, explaining its ability to buck or boost voltage without polarity inversion. The document details SEPIC’s operating modes, voltage-current relationships, and the importance of inductor values for continuous or discontinuous conduction modes.
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 249 KB an1488 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design, safety measures, and compliance with laws. Renesas disclaims liability for damages from misuse, modification, or use outside specified conditions. Products are categorized by quality grades for intended applications, excluding life-critical or hazardous systems unless explicitly stated. Users must consult the latest product information and ensure safety and environmental compliance.
- 应用说明英语PDF 650 KB an9210 2001年12月21日AI 生成的摘要: This document presents a new PSPICE subcircuit model for power MOSFETs with global temperature options. It details synchronous rectifier circuit operation, including gate biasing and conduction modes. The model accurately simulates switching waveforms, diode recovery, and temperature-dependent efficiency. Measured and modeled data show excellent correlation for output characteristics, threshold voltage, breakdown voltage, and on-resistance across temperature ranges. Limitations in linear mode modeling are noted due to PSPICE assumptions.查看更多 (7)
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- 产品变更通告英语PDF 326 KB 2021年5月21日
- 产品变更通告英语PDF 398 KB PCN15046 2016年1月07日
- 产品变更通告英语PDF 248 KB PCN10055 2010年6月30日
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