特性
- Enhancing Tch(MAX.) to 200°C (Operation time until 250 Hr)
- Super low on-state resistance NP100N04MUH, NP100N04NUH RDS(on) = 3.5 mΩ MAX. (VGS = 10 V, ID = 50 A) NP100N04PUH RDS(on) = 3.1 mΩ MAX. (VGS = 10 V, ID = 50 A)
- High avalanche energy, High avalanche current
- Low input capacitance Ciss = 6800 pF TYP. (VDS = 25 V)
描述
The NP100N04MUH, NP100N04NUH, NP100N04PUH are N-channel MOS Field Effect Transistors designed for high current switching applications.
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