特性
- Super low on-state resistance RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A)
- Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V)
- High current rating: ID(DC) = ±100 A
- Designed for automotive application and AEC-Q101 qualified
描述
The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
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