特性
- Enhancing Tch(MAX.) to 200°C (Operation time until 250 Hr)
- Super low on-state resistance NP100N055MDH, NP100N055NDH RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 50 A) RDS(on)2 = 6.6 mΩ MAX. (VGS = 4.5 V, ID = 50 A) NP100N055PDH RDS(on)1 = 4.4 mΩ MAX. (VGS = 10 V, ID = 50 A) RDS(on)2 = 6.2 mΩ MAX. (VGS = 4.5 V, ID = 50 A)
- High avalanche energy, High avalanche current
- Logic level drive Type
- Low input capacitance Ciss = 9500 pF TYP. (VDS = 25 V)
描述
The NP100N055MDH, NP100N055NDH, NP100N055PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.
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