特性
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 22 mΩ MAX. (VGS = 5 V, ID = 17 A)
- Low Ciss : Ciss = 2000 pF TYP.
- Built-in gate protection diode
描述
These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.
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