特性
- Low on-state resistance RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF) RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF) RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10PDF)
- Low Ciss: Ciss = 2100 pF TYP. (VDS = 25 V, VGS = 0 V)
- Logic level drive type
- Designed for automotive application and AEC-Q101 qualified
描述
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
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