特性
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID = 41 A) RDS(on)3 = 12 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
- Low input capacitance Ciss = 4400 pF TYP.
- Built-in gate protection diode
描述
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
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