特性
- Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A)
- Low input capacitance Ciss = 5700 pF TYP.
- Built-in gate protection diode
描述
Support is limited to customers who have already adopted these products.
The NP82N06PLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
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