特性
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 5 V, ID = 42 A) RDS(on)3 = 9.4 mΩ MAX. (VGS = 4.5 V, ID = 42 A)
- Low input capacitance Ciss = 6130 pF TYP.
- Built-in gate protection diode
描述
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
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