特性
- Enhancing Tch(MAX.) to 200°C (Operation time until 250 Hr)
- Super low on-state resistance NP90N04MDH, NP90N04NDH RDS(on)1 = 3.8 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 6.4 mΩ MAX. (VGS = 4.5 V, ID = 45 A) NP90N04PDH RDS(on)1 = 3.4 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 6.0 mΩ MAX. (VGS = 4.5 V, ID = 45 A)
- High avalanche energy, High avalanche current
- Logic level drive Type
- Low input capacitance Ciss = 7500 pF TYP. (VDS = 25 V)
描述
The NP90N04MDH, NP90N04NDH, NP90N04PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.
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