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270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB Laser Diode for 40GBASE-LR4 Application

封装信息

CAD 模型: View CAD Model
Pkg. Type:
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm):
Pitch (mm):

环境和出口类别

RoHS (NX6350EP31-AZ) 英语日文
Moisture Sensitivity Level (MSL)
Pb (Lead) Free Yes
ECCN (US)
HTS (US)

产品属性

Ith (Typical) (mA) 8
Lead Compliant No
MOQ 500
Pb (Lead) Free Yes
Pf / Po (Min) (mW) 8.5
Remarks FL=6.15mm, λp=1270nm, 1290nm, 1310nm, 1330nm
Tape & Reel No
Target applications 10G BASE LR/LW, 40GBASE-LR4
Tstg (Max) (°C) 95
Tstg (Min) (°C) -40
Λp (Typical) for BD (nm) 1330

描述

The NX6350EP series is a 1 270/1 290/1 310/1 330 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.