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特性

  • Optical output power: PO = 8.5 mW
  • Low threshold current: Ith = 7 mA
  • Differential efficiency: ηd = 0.35 W/A
  • Wide operating temperature range: TC = −40 to +85°C
  • InGaAs monitor PIN-PD
  • CAN package: φ 5.6 mm
  • Focal point: 6.2 mm

描述

The NX6353EP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

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