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310 nm AlGaInAs MQW-DFB Laser Diode for 10 Gb/s Application

封装信息

CAD 模型: View CAD Model
Pkg. Type:
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm):
Pitch (mm):

环境和出口类别

RoHS (NX8369TS-AZ) 英语日文
Moisture Sensitivity Level (MSL)
Pb (Lead) Free Yes
ECCN (US)
HTS (US)

产品属性

Ith (Typical) (mA) 8
Lead Compliant No
MOQ 20
Pb (Lead) Free Yes
Pf / Po (Typical) (mW) 0.5
Remarks 10Gb/s Direct modulated LD
Tape & Reel No
Target applications 10GbE/10GFC
Tstg (Max) (°C) 95
Tstg (Min) (°C) -40
Λp (Typical) for BD (nm) 1310

描述

The NX8369TS is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package designed for SFP+/XFP transceiver.