RAA226110 栅极驱动器，0V 关断电压评估板，配合650V/30A，50mΩ GaN E-HEMT
RTK226110DE0010BU 是一款 RAA226110 栅极驱动评估板。 此评估套件包括两颗来自GaN 系统公司的 650V GaN 增强型 HEMT (E-HEMT) 和所有必要的电路，包括半桥栅极驱动器、隔离电源和散热器（可选），以组成一个集成的半桥功率驱动板。...
概览
简介
The RAA226110 is a low-side driver designed to drive enhancement-mode Gallium Nitride (GaN) FETs in isolated and non-isolated topologies. The RAA226110 operates with a supply voltage from 6.5V to 18V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device.
The RAA226110 provides 5.8V gate drive voltage (VDRV) generated by an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of enhancement-mode GaN FETs. The gate drive voltage features an Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL connected to VEEL to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold.
The RAA226110 IN/INB inputs can withstand voltages up to 18V regardless of the VDD voltage, which allows the inputs to be connected directly to most PWM controllers. The split outputs of the RAA226110 offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on and turn-off paths.
The RAA226110 operates across the industrial temperature range from -40°C to +125°C and is offered in a 16-QFN package.
特性
- Wide operating voltage range of 6.5V to 18V
- Up to 18V logic inputs (regardless of VDD level)
- Inverting and non-inverting inputs
- Optimized to drive enhancement mode GaN FETs
- Internal 5.8V regulated gate drive voltage
- Independent outputs for adjustable turn-on/turn-off speeds
- Source current programmable 0.3A, 0.75A, 2A
- Overcurrent protection with adjustable thresholds of 40mV, 80mV, 120mV
- Fault pin and over-temperature protection
- Operating temperature range: -40°C to +125°C
- Flyback and forward converters
- Boost and PFC converters
- Secondary synchronous FET drivers
产品对比
应用
应用
- Switching-mode power supply
- GaN FET driver application
设计和开发
开发板与套件
RAA226110 栅极驱动器，-3V 关断电压评估板，配合650V/60A，25mΩ GaN E-HEMT
RTKA226110DE0040BU 是一款 RAA226110 栅极驱动评估板。 此评估套件包括两颗来自GaN 系统公司的650V GaN 增强型 HEMT (E-HEMT) 和所有必要的电路，包括半桥栅极驱动器、隔离电源和散热器（可选），以组成一个集成的半桥功率驱动板。...
模型
ECAD 模块
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| QFN | Reel | 3 | 2.434 | 获取样片, |
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