高侧 FET 驱动器通过辅助 N 通道 MOSFET 而非传统的 P 通道 MOSFET 让台式电脑、笔记本电脑和上网本电源轨的开启和关闭更为高效线性。高侧 FET 驱动器可大幅减少部件数量，从而降低休眠模式功耗（通过降低泄漏电流）、缩小 PCB 面积，且成本与现有解决方案相当。
高侧 FET 驱动器还支持所有采用英特尔参考标准设计的升温速率或延迟负载开关。此外，高侧 FET 驱动器可让您的产品在不增加成本的情况下达到目前和将来的 EnergyStar® 规范要求。
视频和培训
A detailed overview of the GreenFET product line, focusing on the advantages of Renesas’ proprietary CuFET™ architecture and its impact on performance, size, and reliability. The presentation covers key specifications such as low RDS(on), high continuous current capability, and integrated protection functions including current limiting, thermal shutdown, and reverse‑current blocking. The session also outlines how GreenFET devices streamline power sequencing and reduce external component requirements.