封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | DIP |
| Pkg. Code: | pkg_10217 |
| Lead Count (#): | 28 |
| Pkg. Dimensions (mm): | 36 x 13 x 5.7 |
| Pitch (mm): |
环境和出口类别
| RoHS (R1EV58064BDARBI#B2) | 英语日文 |
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| ECCN (US) | |
| HTS (US) |
产品属性
| Carrier Type | Tube |
| Access Time (ns) | 100 |
| Application | Consumer/Industrial |
| Family Name | Parallel EEPROM |
| Interface | Parallel |
| Lead Compliant | Yes |
| Lead Count (#) | 28 |
| Length (mm) | 36 |
| MOQ | 1 |
| Memory Capacity (kbit) | 64 |
| Moisture Sensitivity Level (MSL) | 1 |
| Organization (bit) | x 8 |
| Organization (kword) | 8 |
| Pb (Lead) Free | Yes |
| Pkg. Dimensions (mm) | 36 x 13 x 5.7 |
| Pkg. Type | DIP |
| Remarks | with reset function |
| Tape & Reel | No |
| Thickness (mm) | 5.7 |
| Width (mm) | 13 |
有关 R1EV58064BDARBI 的资源
描述
Support is limited to customers who have already adopted these products.
Renesas Electronics’ R1EV58064BxxN series and R1EV58064BxxR series are electrically erasable and programmable EEPROM’s organized as 8192-word 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.