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1Mb Advanced LPSRAM (128k word x 8bit)

封装信息

Pkg. Code pkg_11797
Lead Count (#) 32
Pkg. Type TSOP(32)
Pkg. Dimensions (mm) 18.4 x 8 x 1.2

环境和出口类别

Moisture Sensitivity Level (MSL) 3
ECCN (US) EAR99
HTS (US) 85423245000
RoHS (R1LV0108ESF-5SI#B1) 英语日文
Pb (Lead) Free Yes

产品属性

Carrier Type Tray
Moisture Sensitivity Level (MSL) 3
Price (USD) | 1ku 3.52933
Access Time (ns) 55
Density (Kb) 1000
Lead Compliant Yes
Lead Count (#) 32
Length (mm) 18
Longevity 2031 3月
MOQ 1
Memory Capacity (kbit) 1000
Memory Density 1M
Organization 128K x 8
Organization (bit) x 8
Organization (kword) 128
Pb (Lead) Free Yes
Pkg. Dimensions (mm) 18 x 8 x 1.2
Pkg. Type TSOP(32)
Remarks Dual Chip Select (CS1#, CS2)
Replacement Remark consolidation of part-names and/or assembly material change
Supply Voltage (V) 2.7 - 3.6
Tape & Reel No
Temp. Range -40 to +85°C
Thickness (mm) 1.2
Width (mm) 8

描述

The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131, 072-word by 8-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LV0108E Series has realized higher density, higher performance and low power consumption. The R1LV0108E Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. It has been packaged in 32-pin SOP, 32-pin TSOP and 32-pin sTSOP.