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Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit / 2-Mword × 8-bit)

封装信息

CAD 模型: View CAD Model
Pkg. Type: TSOP(1)
Pkg. Code: pkg_466
Lead Count (#): 48
Pkg. Dimensions (mm): 18.4 x 12 x 1.2
Pitch (mm):

环境和出口类别

ECCN (US) 3A991.b.2.a
HTS (US) 8542.32.0041
RoHS (R1LV1616HSA-4SI#B0) 英语日文
Moisture Sensitivity Level (MSL) 2
Pb (Lead) Free Yes

产品属性

Carrier Type Tray
Access Time (ns) 45
Density (Kb) 16000
Lead Compliant Yes
Lead Count (#) 48
Length (mm) 18
MOQ 1
Memory Capacity (kbit) 16000
Memory Density 16M
Moisture Sensitivity Level (MSL) 2
Organization 1M x 16
Organization (bit) x 8 / x 16
Organization (kword) 2000
Pb (Lead) Free Yes
Pkg. Dimensions (mm) 18 x 12 x 1.2
Pkg. Type TSOP(1)
Remarks Dual Chip Select (CS1#, CS2)
Replacement Product R1LV1616HSA-4SI#B1
Supply Voltage (V) 2.7 - 3.6
Tape & Reel No
Temp. Range (°C) -40 to +85
Thickness (mm) 1.2
Width (mm) 12

描述

The R1LV1616HSA-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit / 2-Mword × 8-bit with embedded ECC. R1LV1616HSA-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-pin plastic TSOPI for high density surface mounting.