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瑞萨电子 (Renesas Electronics Corporation)
72-Mbit DDRII SRAM 2-word Burst

封装信息

CAD 模型:View CAD Model
Pkg. Type:LBGA
Pkg. Code:pkg_6857
Lead Count (#):165
Pkg. Dimensions (mm):15 x 13 x 1.4
Pitch (mm):1

环境和出口类别

RoHS (R1Q4A7218ABB-33IB0)英语日文
Moisture Sensitivity Level (MSL)3
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

产品属性

Pkg. TypeLBGA
Carrier TypeTray
ArchitectureDDR-II CIO
Burst Length (Words)2
Data Width (bits)18000
Density (Kb)72000
Frequency (Max) (MHz)300
Lead CompliantYes
Lead Count (#)165
Length (mm)15
MIN Frequency (MHz)180
MOQ1
Moisture Sensitivity Level (MSL)3
Pb (Lead) FreeYes
Pkg. Dimensions (mm)15 x 13 x 1.4
Read Latency (Clock)1.5
Replacement ProductR1Q4A7218ABB-33IB1
Tape & ReelNo
Thickness (mm)1.4
Width (mm)13

描述

The R1Q4A7236 is a 2, 097, 152-word by 36-bit and the R1Q4A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.