封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | LBGA |
| Pkg. Code: | pkg_9995 |
| Lead Count (#): | 165 |
| Pkg. Dimensions (mm): | 17 x 15 x 1.4 |
| Pitch (mm): |
环境和出口类别
| RoHS (R1QEA4418RBG-18IB0) | 英语日文 |
| Pb (Lead) Free | |
| Moisture Sensitivity Level (MSL) | |
| ECCN (US) | |
| HTS (US) |
产品属性
| Pkg. Type | LBGA |
| Carrier Type | Tray |
| Architecture | DDR-II+ CIO with ODT |
| Burst Length (Words) | 2 |
| Data Width (bits) | 18000 |
| Density (Kb) | 144000 |
| Frequency (Max) (MHz) | 550 |
| Lead Compliant | No |
| Lead Count (#) | 165 |
| Length (mm) | 17 |
| MIN Frequency (MHz) | 250 |
| Pkg. Dimensions (mm) | 17 x 15 x 1.4 |
| Read Latency (Clock) | 2.5 |
| Tape & Reel | No |
| Thickness (mm) | 1.4 |
| Width (mm) | 15 |
有关 R1QEA4418RBG-18I 的资源
描述
The R1QEA4436RBG is a 4, 194, 304-word by 36-bit and the R1QEA4418RBG is a 8, 388, 608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.