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144-Mbit DDR™II+ SRAM 2-word Burst Architecture ( 2.5 Cycle Read latency ) with ODT

封装信息

Pkg. Type LBGA
Pkg. Code pkg_9995
Lead Count (#) 165
Pkg. Dimensions (mm) 17 x 15 x 1.4

环境和出口类别

Moisture Sensitivity Level (MSL) 3
ECCN (US) EAR99
RoHS (R1QEA4436RBG-19IB0) 英语日文
Pb (Lead) Free Yes
HTS (US)

产品属性

Pkg. Type LBGA
Carrier Type Tray
Moisture Sensitivity Level (MSL) 3
Architecture DDR-II+ CIO with ODT
Burst Length (Words) 2
Data Width (bits) 36000
Density (Kb) 144000
Frequency (Max) (MHz) 533
Lead Compliant Yes
Lead Count (#) 165
Length (mm) 17
MIN Frequency (MHz) 250
MOQ 1
Pb (Lead) Free Yes
Pkg. Dimensions (mm) 17 x 15 x 1.4
Read Latency (Clock) 2.5
Tape & Reel No
Thickness (mm) 1.4
Width (mm) 15

描述

The R1QEA4436RBG is a 4, 194, 304-word by 36-bit and the R1QEA4418RBG is a 8, 388, 608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.