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封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | SO8-FL |
| Pkg. Code: | |
| Lead Count (#): | 8 |
| Pkg. Dimensions (mm): | 4.90 x 6.10 x 1.00 |
| Pitch (mm): |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| ECCN (US) | |
| HTS (US) |
产品属性
| Pkg. Type | SO8-FL |
| Lead Count (#) | 8 |
| Carrier Type | Embossed Tape |
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| Channels (#) | 1 |
| Ciss (Typical) (pF) | 2800 |
| Function | Power MOSFETs |
| Gate Level | Standard |
| ID (A) | 80 |
| Id max @ 25°C (A) | 80 |
| Lead Compliant | No |
| MOQ | 5000 |
| Mounting Type | Surface Mount |
| Nch/Pch | Nch |
| Pch (W) | 100 |
| Pkg. Dimensions (mm) | 4.90 x 6.10 x 1.00 |
| Qg typ (nC) | 42 |
| Qualification Level | Industrial |
| RDS (ON) (Max) @10V or 8V (mohm) | 6.7 |
| RDS (ON) (Typical) @ 10V / 8V (mohm) | 5.8 |
| Series Name | REXFET-1 |
| Simulation Model Available | Yes |
| Standard Pkg. Type | SO8-FL 5x6 BSC |
| Tape & Reel | No |
| VDSS (Max) (V) | 100 |
| VGSS (V) | 20 |
| Vgs (off) (Max) (V) | 4 |
有关 RBE067N10R1SZN6 的资源
描述
RBE067N10R1SZN6 N 沟道功率 MOSFET 采用 REXFET-1 分离栅技术，提供 SO8-FL(5x6) 封装。SO8-FL(5x6) 封装采用超紧凑无引脚设计和可润湿侧翼结构，可增强热性能和可靠性并提高组装的便利性。
瑞萨电子的 REXFET-1 分离栅技术非常适合需要低 RDS(on) 和重视开关性能的场景，是大功率和高频应用的理想选择。